2017 IISW Call for Papers

The 2017 International Image Sensor Workshop (IISW) to be held in Hiroshima, Japan, on May 30 - June 2, 2017, calls for papers presenting innovative work in the area of solid-state image sensors and share new results with the imaging community. The workshop is intended for image sensor technologists and has limited attendance. As in the previous years, the workshop will emphasize active interaction and encourage exchange of information among the workshop participants in an informal and open atmosphere at a great venue.

The scope of the workshop includes all aspects of electronic image sensor design and development. In addition to regular oral and poster papers, the workshop will include invited talks and announcement of International Image Sensors Society (IISS) Award winners.

Papers on the following topics are solicited:

Image Sensor Design and Performance:

• CMOS imagers, CCD imagers, APD arrays.
• New and disruptive architectures
• Global shutter image sensors
• Low noise readout circuitry, ADC designs
• Single photon sensitivity sensors
• High frame rate image sensors
• High dynamic range sensors
• Low voltage and low power imagers
• High image quality. Low noise. High sensitivity
• Improved color reproduction
• Non-standard color patterns with special digital processing
• Imaging system-on-a-chip, On-chip image processing

Pixels and Image Sensor Device Physics:

• New devices and pixel structures
• Advanced materials
• Ultra miniaturized pixels development, testing, and characterization
• New device physics and phenomena
• Electron multiplication pixels
• Techniques for increasing QE, well capacity, reducing crosstalk, and improving angular response
• Front side illuminated and back side illuminated pixels and pixel arrays
• Pixel simulation: Optical and electrical simulation, 2D and 3D, CAD for design and simulation
• Improved models

Application Specific Imagers:

• Image sensors and pixels for range sensing: TOF, RGBZ, Structured light, Stereo imaging, etc.
• Image sensors with enhanced spectral sensitivity (NIR, UV, IR)
• Sensors for DSC, DSLR, mobile, digital video cameras and mirror-less cameras
• Array imagers and sensors for multi-aperture imaging and computational Imaging
• Sensors for medical applications, microbiology, genome sequencing
• High energy photon and particle sensors (X-ray, radiation).
• Line arrays, TDI, Very large format imagers
• Multi and hyperspectral imagers
• Polarization sensitive imagers

Image sensor manufacturing and testing:

• New manufacturing techniques
• Backside thinning
• Stacked imagers, 3D integration

On-chip optics:

• Advanced optical path, Color filters, Microlens, Light guide
• Nanotechnologies for Imaging
• Wafer level cameras

Packaging and testing:

• Reliability, Yield, Cost
• Defects. Leakage current.
• Radiation damages and radiation hard imagers

Abstracts should be submitted electronically to the Technical Program Chair, Shoji Kawahito by January 19, 2017 (JST).

Grand Prince Hotel Hiroshima

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